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TSM2323 - 20V P-Channel MOSFET

General Description

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Key Features

  • www. DataSheet4U. com Block Diagram.
  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM2323
Manufacturer Taiwan Semiconductor Company
File Size 402.56 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet TSM2323 Datasheet

Other Datasheets by Taiwan Semiconductor Company

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TSM2301B 20V P-Channel MOSFET
TSM2302 20V N-Channel Enhancement Mode MOSFET
TSM2306 30V N-Channel MOSFET
TSM2307 30V P-Channel MOSFET
TSM2310 20V N-Channel MOSFET
TSM2311 20V P-Channel Enhancement Mode MOSFET
TSM2312 20V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM2323 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 39 @ VGS = -4.5V -20 52 @ VGS = -2.5V 68 @ VGS = -1.8V ID (A) -4.7 -4.1 -2.0 Features www.DataSheet4U.com Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. TSM2323CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.