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TSM60N06 Datasheet, Taiwan Semiconductor

TSM60N06 mosfet equivalent, n-channel power mosfet.

TSM60N06 Avg. rating / M : 1.0 rating-11

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TSM60N06 Datasheet

Features and benefits


* Advanced Trench Technology
* Low RDS(ON) 7.3mΩ (Max.)
* Low gate charge typical @ 81nC (Typ.)
* Low Crss typical @ 339pF (Typ.) Ordering Information P.

Application

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or impli.

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TAGS

TSM60N06
N-Channel
Power
MOSFET
TSM60N03
TSM60N1R4
TSM60N380
Taiwan Semiconductor

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