TSM60N380CZ
TSM60N380CZ is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- Super-Junction technology
- High performance due to small figure-of-merit
- High ruggedness performance
- High mutation performance
- Pb-free plating
- pliant to Ro HS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
600 V 0.38 Ω 20.5 n C
APPLICATION
- Power Supply
- Lighting
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 600 VGS ±30
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3)
IDM PDTOT EAS
11 6.6 33 125 169 2.6
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to...
