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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM60NB041PW Datasheet

N-Channel Power MOSFET

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TSM60NB041PW
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 78A, 41mΩ
FEATURES
Super-Junction technology
High performance, small RDS(ON)*Qg figure of merit (FOM)
High ruggedness performance
100% UIS and Rg tested
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
600
41
139
V
mΩ
nC
APPLICATIONS
PFC Stage
Server/Telecom Power
Charging Station
Inverter
Power Supply
TO-247
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulse Avalanche Energy (Note 3)
Single Pulse Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
IAS
TJ, TSTG
600
±30
78
49
234
446
1122
6.7
- 55 to +150
UNIT
V
V
A
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
0.28 °C/W
Junction to Ambient Thermal Resistance
RӨJA
42 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1 Version: A1706


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM60NB041PW Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM60NB041PW
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
(Note 4)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±30V, VDS = 0V
VDS = 600V, VGS = 0V
VGS = 10V, ID = 21.7A
BVDSS
VGS(TH)
IGSS
IDSS
RDS(on)
600
2
--
--
--
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching (Note 6)
VDS = 480V, ID = 65A,
VGS = 10V
VDS = 100V,VGS = 0V,
f = 1.0MHz
f = 1.0MHz
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
--
--
--
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, RGEN = 5Ω,
ID = 32.5A, VGS = 10V
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Body-Diode Continuous Forward Current
Body-Diode Pulsed Current
Forward Voltage (Note 4)
IS = 65A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
IS = 32.5A
dIF/dt = 100A/μs
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. L = 50mH, IAS = 6.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW 300µs, duty cycle 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
IS
ISM
VSD
trr
Qrr
--
--
--
--
--
TYP
--
3
--
--
38
139
41
52
6120
276
43
4.6
107
152
445
148
--
--
--
478
10
MAX UNIT
--
4
±100
1
41
V
V
nA
µA
mΩ
--
-- nC
--
--
-- pF
--
9.2 Ω
--
--
ns
--
--
78 A
234 A
1.4 V
-- ns
-- μC
ORDERING INFORMATION
PART NO.
TSM60NB041PW C1G
PACKAGE
TO-247
PACKING
25pcs / Tube
2
Version: A1706


Part Number TSM60NB041PW
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
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