The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TSM60NB041PW
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 78A, 41mΩ
FEATURES
● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
600 41 139
V mΩ nC
APPLICATIONS
● PFC Stage ● Server/Telecom Power ● Charging Station ● Inverter ● Power Supply
TO-247
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Si
TSM60NB041PW Datasheet
