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TSM10N80CZ, TSM10N80 Datasheet - Taiwan Semiconductor

TSM10N80CZ 800V N-Channel Power MOSFET

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The.

TSM10N80CZ Features

* Low RDS(ON) 1.05Ω (Max.) Low gate charge typical @ 53nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless ot

TSM10N80-TaiwanSemiconductor.pdf

This datasheet PDF includes multiple part numbers: TSM10N80CZ, TSM10N80. Please refer to the document for exact specifications by model.
TSM10N80CZ Datasheet Preview Page 2 TSM10N80CZ Datasheet Preview Page 3

Datasheet Details

Part number:

TSM10N80CZ, TSM10N80

Manufacturer:

Taiwan Semiconductor

File Size:

497.95 KB

Description:

800v n-channel power mosfet.

Note:

This datasheet PDF includes multiple part numbers: TSM10N80CZ, TSM10N80.
Please refer to the document for exact specifications by model.

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