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* Low RDS(ON) 1.05Ω (Max.) Low gate charge typical @ 53nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM1.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ.

TSM10N80CI

TSM10N80CZ

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