TSM10N80CI mosfet equivalent, 800v n-channel power mosfet.
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* Low RDS(ON) 1.05Ω (Max.) Low gate charge typical @ 53nC (Typ.) Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM10N80CZ C0 TSM1.
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The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ.
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