TSM100N06 - 60V N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

Advanced Trench Technology.
Low RDS(ON) 6.7mΩ (Max. ).
Low gate charge typical @ 81nC (Typ. ).
Low Crss typical @ 339pF (Typ. ) Ordering Information Part No. TSM100N06CZ C0G Package TO-220 Packing 50pcs / Tube Note: “G” denote for Halogen Free Product Block Diagram N-Channel.

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Taiwan Semiconductor TSM100N06-like datasheet

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