TSM100N06 Description
Source TSM100N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 6.7 @ VGS =10V ID (A) 100.
TSM100N06 Key Features
- Advanced Trench Technology
- Low RDS(ON) 6.7mΩ (Max.)
- Low gate charge typical @ 81nC (Typ.)
- Low Crss typical @ 339pF (Typ.)