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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM100N06 Datasheet

60V N-Channel Power MOSFET

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TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
TSM100N06
60V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(m)
60 6.7 @ VGS =10V
ID (A)
100
Features
Advanced Trench Technology
Low RDS(ON) 6.7m(Max.)
Low gate charge typical @ 81nC (Typ.)
Low Crss typical @ 339pF (Typ.)
Ordering Information
Part No.
TSM100N06CZ C0G
Package
TO-220
Packing
50pcs / Tube
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed Note 1
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
Maximum Power Dissipation
TC=25°C
TC=70°C
TA=25°C
TA=70°C
TC=25°C
TC=70°C
TA=25°C
VDS
VGS
ID
IDM
IAS
EAS, EAR
PD
Storage Temperature Range
Operating Junction Temperature Range
TA=70°C
TSTG
TJ
* Limited by maximum junction temperature
Limit
60
±20
100(3)
80
14
11
400
71
400
167
107
2
1.3
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t 10sec
Symbol
RӨJC
RӨJA
Limit
0.8
62.5
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
°C/W
°C/W
Document Number: DS_P0000019
1
Version: B15


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM100N06 Datasheet

60V N-Channel Power MOSFET

No Preview Available !

TSM100N06
60V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
VGS = 0V, ID = 250uA
VGS = 10V, ID = 30A
VDS = VGS, ID = 250uA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
BVDSS
60
--
--
V
RDS(ON) -- 5.7 6.7 m
VGS(TH)
2
3
4V
IDSS -- -- 1 uA
IGSS -- -- ±100 nA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 30V, ID = 30A,
VGS = 10V
VDS = 30V, VGS = 0V,
f = 1.0MHz
Qg -- 81 --
Qgs -- 23 -- nC
Qgd -- 24 --
Ciss -- 4382 --
Coss -- 668 -- pF
Crss -- 339 --
Turn-On Delay Time
td(on)
-- 25 --
Turn-On Rise Time
Turn-Off Delay Time
VGS = 10V, VDS = 30V,
RG = 3.3
tr
td(off)
-- 19 --
nS
-- 85 --
Turn-Off Fall Time
tf -- 43 --
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS=0V, IS=20A
VSD
-
0.8 1.3
V
Reverse Recovery Time
IS = 30A, TJ=25 oC
tfr
36 nS
Reverse Recovery Charge
dI/dt = 100A/us
Qfr
53 nC
Notes:
1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA
is determined by the user's board design. RӨJA shown below for single device operation on FR-4 in still air
3. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is
75A
Document Number: DS_P0000019
2
Version: B15


Part Number TSM100N06
Description 60V N-Channel Power MOSFET
Maker Taiwan Semiconductor
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