- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge ca.

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 1 FORWARD CURRENT DERATING CURVE 30 25 TSF20H100C 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TSF20H100C .

TSF20H100C

TSF20H150C

TSF204D00-S1

TSF2080C

TSF20L100C

TSF20L120C

TSF20L150C

TSF20L200C

TSF20N50M

TSF20N60MR

TSF20N60S

TSF20N65S

TSF20U100C

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