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TSF2080C Datasheet, Taiwan Semiconductor

TSF2080C rectifier equivalent, dual high-voltage trench mos barrier schottky rectifier.

TSF2080C Avg. rating / M : 1.0 rating-11

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TSF2080C Datasheet

Features and benefits

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge ca.

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC AVERAGE FORWARD C.

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TSF2080C Page 1 TSF2080C Page 2 TSF2080C Page 3

TAGS

TSF2080C
Dual
High-Voltage
Trench
MOS
Barrier
Schottky
Rectifier
TSF204D00-S1
TSF20H100C
TSF20H120C
Taiwan Semiconductor

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