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TSF20H120C Datasheet, Taiwan Semiconductor

TSF20H120C rectifier equivalent, dual high-voltage trench mos barrier schottky rectifier.

TSF20H120C Avg. rating / M : 1.0 rating-11

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TSF20H120C Datasheet

Features and benefits

Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage -.

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TA=150oC AVERAGE FORWAR.

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TSF20H120C Page 1 TSF20H120C Page 2 TSF20H120C Page 3

TAGS

TSF20H120C
Dual
High-Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Taiwan Semiconductor

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