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CXK5B16120J - 65536-word X 16-bit High Speed Bi-CMOS Static RAM

Description

CXK5B16120J/TM is a high speed 1M bit BiCMOS static RAM organized as 65536 words by 16 bits.

Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

Features

  • Single 3.3V Supply 3.3V±0.3V.
  • Fast access time 12ns (Max. ).
  • Low stand-by current: 10mA (Max. ).
  • Low power operation 972mW (Max. ).
  • Package line-up Dual Vcc/Vss CXK5B16120J 400mil 44pin SOJ Package CXK5B16120TM 400mil 44pin TSOP Package CXK5B16120J 44 pin SOJ (Plastic) CXK5B16120TM 44 pin TSOP (Plastic) Function 65536-word × 16-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A14 A15 A9 A8 A12 A13 A11 A10 Buffer Row Decoder Memory Vcc Ma.

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Full PDF Text Transcription (Reference)

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CXK5B16120J/TM -12 65536-word × 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B16120J/TM is a high speed 1M bit BiCMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features • Single 3.3V Supply 3.3V±0.3V • Fast access time 12ns (Max.) • Low stand-by current: 10mA (Max.) • Low power operation 972mW (Max.