SSF3639C mosfet equivalent, mosfet.
*N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V
*P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS.
GENERAL FEATURES
*N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V
*P-Channel.
The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
*N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5m.
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