SSF3637 datasheet, mosfet equivalent, Silikron Semiconductor

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Features and benefits

*VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
* Su.

Application

requiring a wide range of gave drive voltage ratings (4.5V
– 25V). GENERAL FEATURES
*VDS = -30V,ID =.

Description

The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
– 25V). GENERAL FEATURES

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