SSF3637S datasheet, mosfet equivalent, Silikron Semiconductor

Features and benefits

* VDS =- 30V,ID =-10A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
* S.

Application

GENERAL FEATURES
* VDS =- 30V,ID =-10A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-10V
* High Power and cu.

Description

The SSF3637S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES
* VDS =- 30V,ID =-10A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 45.

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