SSF3365 datasheet, mosfet equivalent, Silikron Semiconductor

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Features and benefits

* VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
* .

Application

D G GENERAL FEATURES
* VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V
* High Power.

Description

The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES
* VDS = -30.

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