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SSF3314E - MOSFET

General Description

The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Key Features

  • VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=10V ESD Rating：2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Pin Assignment DFN3×3-8L BOTTOM VIEW.

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Datasheet Details

Part number SSF3314E
Manufacturer Silikron Semiconductor
File Size 163.55 KB
Description MOSFET
Datasheet download datasheet SSF3314E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF3314E DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. GENERAL FEATURES ● VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.