SSF3365 mosfet equivalent, p-channel mosfet.
* VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product
* Surface Moun.
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GENERAL FEATURES
* VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V
* High Power.
The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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GENERAL FEATURES
* VDS = -30.
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