SSF3365 mosfet equivalent, p-channel mosfet.
* VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product
* Surface Moun.
D G
GENERAL FEATURES
* VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V
* High Power.
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