SSF2307B datasheet, mosfet equivalent, Silikron Semiconductor

Features and benefits

* VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V
* High Power and current handing capability
* Lead free product is acquired
*.

Application

D G GENERAL FEATURES
* VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V
* High Powe.

Description

The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES
* VDS = -2.

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