SSF10N90F1 mosfet equivalent, mosfet.
* Advanced MOSFET process technology
* Low On Resistance
* Low Gate Charge
* Fast switching and reverse body recovery
TO-3P
SSF10N90F1
Marking and pin.
Absolute max Rating:
Symbol ID @ TC = 25℃ ID @ TC = 100℃ IDM
PD @TC = 25℃
VDS VGS EAS IAS TJ TSTG
Parameter Continuo.
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.
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