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Main Product Characteristics:
VDSS
800V
RDS(on) ID
13Ω (typ.) 1A
Features and Benefits:
TO-252
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF1N80D
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF1N80D Datasheet
