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SSF10N60F - N-Channel MOSFET

Datasheet Summary

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • TO220F.
  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF10N60F
Manufacturer SILIKRON
File Size 500.82 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF10N60F Datasheet
Additional preview pages of the SSF10N60F datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Features and Benefits: TO220F  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF10N60F Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
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