SSFN3317
SSFN3317 is MOSFET manufactured by Silikron.
Main Product Characteristics:
VDSS
-30V
RDS(on) 26mΩ(typ.)
-7A
Features and Benefits
DFN3×3-8L
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Pin Assignments
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. -7 -40 3.1 -30
± 25 -55 to +150
Units
W V V °C
©Silikron Microelectronics (Suzhou) Co.,Ltd
.silikron.
Version: 1.3 page1of6
Thermal Resistance
Symbol RθJA
Characterizes Junction-to-Ambient④
Typ....
