SSFN2269 - MOSFET

Description

The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -20V,ID =-3.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment.

Silikron

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Datasheet Details

Part number	SSFN2269
Manufacturer	Silikron
File Size	211.59 KB
Description	MOSFET
Datasheet	SSFN2269 Datasheet

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Full PDF Text Transcription

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SSFN2269 DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-3.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.

Published: Jun 28, 2017 |