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VQ2001 SERIES
P-Channel Enhancement-Mode MOS Transistor Arrays
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(n)
(A)
PACKAGE
VQ2001J
-30
2
-0.6
Plastic
VQ2001P -30
2
-0.6 Side Braze
Performance Curves: VPMH03 (See Section 7)
14-PIN DIP SIDE BRAZE
~
~~D
14-PIN PLASTIC
~ .rS
iliconix
incorporated
TOP VIEW Oual-In-Une Package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Vos
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current 1 Power Dissipation - Single
Power Dissipation - Quad
TA= 25°C 10
TA= 100°C
10M
TA= 25°C
TA= 100°C Po
TA= 25°C
TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Tj.
VQ2001 Datasheet
