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VP0300B/L/M, VQ2001J/P
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number VP0300B VP0300L VP0300M VQ2001J VQ2001P
V(BR)DSS Min (V) –30
rDS(on) Max (W) 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2 @ VGS = –12 V 2 @ VGS = –12 V
VGS(th) (V) –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5
ID (A) –1.25 –0.32 –0.5 –0.6 –0.6
Features
D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold: –3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF
Benefits
D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer
Applications
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
VQ2001P Datasheet
