SVT077R5ND datasheet, mosfet equivalent, Silan Microelectronics

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Features and benefits

* 95A, 68V, RDS(on)(typ.)=6.5m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 .

Description

The SVT077R5NT/D/S/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide .

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