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SVS5N70D - 700V DP MOS POWER TRANSISTOR

General Description

SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 5A,700V, RDS(on)(typ. )=0.8@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet Details

Part number SVS5N70D
Manufacturer Silan Microelectronics
File Size 481.55 KB
Description 700V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS5N70D Datasheet

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SVS5N70F 700V DP MOS POWER TRANSISTOR
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SVS5N70MU 700V DP MOS POWER TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  5A,700V, RDS(on)(typ.)=0.8@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.