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SVS5N70MJ - 700V DP MOS POWER TRANSISTOR

Download the SVS5N70MJ datasheet PDF. This datasheet also covers the SVS5N70D variant, as both devices belong to the same 700v dp mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 5A,700V, RDS(on)(typ. )=0.8@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS5N70D-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS5N70MJ
Manufacturer Silan Microelectronics
File Size 481.55 KB
Description 700V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS5N70MJ Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVS5N70MN 700V DP MOS POWER TRANSISTOR
SVS5N70MU 700V DP MOS POWER TRANSISTOR
SVS5N70D 700V DP MOS POWER TRANSISTOR
SVS5N70F 700V DP MOS POWER TRANSISTOR
SVS11N60FD2 600V DP MOS POWER TRANSISTOR

Full PDF Text Transcription

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SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  5A,700V, RDS(on)(typ.)=0.8@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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