SVF6N70N datasheet, mosfet equivalent, Silan Microelectronics

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Features and benefits

* 6A,700V,RDS(on(typ.)=1.35@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO.

Description

SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-st.

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