SVF6N60FQ datasheet, mosfet equivalent, Silan Microelectronics

Features and benefits

* 6A,600V,RDS(on(typ.)=1.35@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Par.

Description

SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimiz.

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