∗ 6A,600V,RDS(on(typ)=1.35Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF6N60MJ SVF6N.

SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially .

SVF6N60D

SVF6N60FQ

SVF6N60MJ

SVF6N70D

SVF6N70K

SVF6N70MJG

SVF6N70N

SVF10N60CF

SVF10N60CFJ

SVF10N60CFJD

SVF10N60CT

SVF10N60F

SVF10N60FG

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