2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L
* 14A, 250V, RDS(on)(typ.)=0.28@VGS=10V
* Ultra low gate charge
* Low Crss
* Fast switching
* Improved d.

SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize o.

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