SVF10N60CFJ datasheet, mosfet equivalent, Silan Microelectronics

Features and benefits

* 10A, 600V, RDS(on)(typ.)=0.75@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain .

Description

SVF10N60CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state r.

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