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SVF10N60K - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF10N60K, a member of the SVF10N60T 600V N-CHANNEL MOSFET family.

Description

SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 10A,600V,RDS(on)(typ. )=0.75Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet preview – SVF10N60K

Datasheet Details

Part number SVF10N60K
Manufacturer Silan Microelectronics
File Size 597.71 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF10N60K Datasheet
Additional preview pages of the SVF10N60K datasheet.

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Full PDF Text Transcription

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 10A,600V,RDS(on)(typ.)=0.75Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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