SVF10N60K Datasheet | Silan Microelectronics

DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 10A,600V,RDS(on)(typ.)=0.75Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF10N60T SVF10N60F SVF10N60FG SVF10N60S SVF10N60STR SVF10N60K Package TO-220-3L TO-220F-3L TO-220F-3L TO-263-2L TO-263-2L TO-262-3L Marking SVF10N60T SVF10N60F SVF10N60FG SVF10N60S SVF10N60S SVF10N60K Material Pb free Pb free Halogen free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape &Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://.silan..cn REV:1.5 2012.06.04 Page 1 of 9 SVF10N60T/F/FG/S/K_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Ratings Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TC=25°C TC=100°C Symbol VDS VGS ID IDM PD EAS TJ Tstg 156 1.25 50 0.4 654 -55～+150 -55～+150 SVF10N 60T SVF10N 60F(G) 600 ±30 10 7 40 150 1.20 148 1.18 SVF10N 60S SVF10N 60K V V A A W W/°C m J °C °C Unit THERMAL CHARACTERISTICS Ratings Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVF10N 60T 0.8 62.5 SVF10N 60F(G) 2.5 120 SVF10N 60S 0.83 62.5 SVF10N 60K 0.84 62.5 °C/W °C/W Unit ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage...