∗ 11A, 900V, RDS(on) (typ.)=0.82Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF11N90P.

SVF11N90PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tai.

SVF11N65F

SVF11N65T

SVF10N60CF

SVF10N60CFJ

SVF10N60CFJD

SVF10N60CT

SVF10N60F

SVF10N60FG

SVF10N60K

SVF10N60S

SVF10N60STR

SVF10N60T

SVF10N65F

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