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SVF11N65F - 650V N-CHANNEL MOSFET

Download the SVF11N65F datasheet PDF. This datasheet also covers the SVF11N65T variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 11A, 650V, RDS(on)(typ. )= 0.76Ω@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF11N65T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF11N65F
Manufacturer Silan Microelectronics
File Size 284.33 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF11N65F Datasheet

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Other Datasheets by Silan Microelectronics

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SVF11N65T 650V N-CHANNEL MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF11N65T/F_Datasheet 11A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  11A, 650V, RDS(on)(typ.)= 0.76Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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