SVF10N70FJ datasheet, mosfet equivalent, Silan Microelectronics

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Features and benefits

* 10A,700V,RDS(on)(typ.)=0.95@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3..

Description

SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize.

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