SVD1N80F mosfet equivalent, 800v n-channel mosfet.
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TO-92-3L
1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
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SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially .
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