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SVD1N60B Datasheet, Silan Microelectronics

SVD1N60B mosfet equivalent, 600v n-channel mosfet.

SVD1N60B Avg. rating / M : 1.0 rating-12

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SVD1N60B Datasheet

Features and benefits

∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ.)=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N60M SVD1N.

Description

SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especial.

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TAGS

SVD1N60B
600V
N-CHANNEL
MOSFET
SVD1N60BTR
SVD1N60D
SVD1N60DTR
Silan Microelectronics

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