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SVD1N60B - 600V N-CHANNEL MOSFET

Download the SVD1N60B datasheet PDF. This datasheet also covers the SVD1N60M variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

structure VDMOS technology.

Features

  • ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ. ）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD1N60M-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD1N60B
Manufacturer Silan Microelectronics
File Size 526.39 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVD1N60B Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVD1N60BTR 600V N-CHANNEL MOSFET
SVD1N60D 600V N-CHANNEL MOSFET
SVD1N60DTR 600V N-CHANNEL MOSFET
SVD1N60M 600V N-CHANNEL MOSFET
SVD1N60T 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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