Datasheet Summary
SVD1N60M/T/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Features
∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt...