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SVD1N60M - 600V N-CHANNEL MOSFET

Description

structure VDMOS technology.

Features

  • ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ. ）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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Datasheet Details

Part number SVD1N60M
Manufacturer Silan Microelectronics
File Size 526.39 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVD1N60M Datasheet

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Full PDF Text Transcription

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SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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