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SVD1N60DTR, SVD1N60M Datasheet - Silan Microelectronics

SVD1N60DTR 600V N-CHANNEL MOSFET

SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provi.

SVD1N60DTR Features

* ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N60M SVD1N60M SVD1N60T SVD1N60B SVD1N60BTR SVD1N60D SVD1N60DTR Package TO-251-3L TO-251D-3L TO-220-3L TO-92-3L TO-92-3L TO-252-2L TO-252-2L

SVD1N60M-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD1N60DTR, SVD1N60M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD1N60DTR, SVD1N60M

Manufacturer:

Silan Microelectronics

File Size:

526.39 KB

Description:

600v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD1N60DTR, SVD1N60M.
Please refer to the document for exact specifications by model.

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SVD1N60DTR SVD1N60M 600V N-CHANNEL MOSFET Silan Microelectronics

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