BTS112A Datasheet | Siemens Semiconductor Group

TEMPFET® BTS 112A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrical Iy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A 60 V 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 12 2.5 48 27 400 40 - 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C - W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 °C Tj = - 55 ... + 150 °C Short circuit dissipation, Tj = - 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group BTS 112A Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 m A Gate threshold voltage VGS = VDS, ID = 1.0 m A Zero gate voltage drain current VGS = 60 V, VDS = 0 Tj = 25 °C Tj = 150 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID = 7.5 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 7.5 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max....