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BTS113A - TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

Key Features

  • q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 113A VDS 60 V ID 11.5 A RDS(on) 0.17 Ω Package TO-220AB Ordering Code C67078-S5015-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short cir.

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Part Number Description Manufacturer
BTS113A TEMPFET(N-channel Logic level Enhancement mode Temperature sensor with thyristor characteristic) Infineon Technologies AG
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BTS110 TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) Infineon Technologies AG
BTS112A TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) Infineon Technologies AG
BTS114A TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic) Infineon Technologies AG

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TEMPFET® BTS 113A Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 113A VDS 60 V ID 11.5 A RDS(on) 0.17 Ω Package TO-220AB Ordering Code C67078-S5015-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 10 11.5 2.2 46 27 400 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ...