BTS112A - TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)

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Infineon Technologies AG

Part number	BTS112A
Manufacturer	Infineon Technologies AG
File Size	579.28 KB
Description	TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
Datasheet	BTS112A Datasheet
Additional preview pages of the BTS112A datasheet.

and charts stated herein.

q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbo.

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Other Datasheets by Infineon Technologies AG

BTS110 - TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
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Published: Apr 17, 2005 |