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Siemens Electronic Components Datasheet

MPSA42 Datasheet

NPN Silicon High-Voltage Transistors

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NPN Silicon High-Voltage Transistors
q High breakdown voltage
q Low collector-emitter saturation voltage
q Complementary types: MPSA 92
MPSA 93 (PNP)
MPSA 42
MPSA 43
321
Type
MPSA 42
MPSA 43
Marking
Ordering Code
MPSA 42
MPSA 43
Q68000-A413
Q68000-A4809
Pin Configuration
123
EBC
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TC = 66 ˚C 2)
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
IB
Ptot
Tj
Tstg
MPSA 42
300
Values
MPSA 43
200
300 200
6
500
100
625
150
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case 2)
Rth JA
Rth JC
200
135
Package 1)
TO-92
Unit
V
mA
mW
˚C
K/W
1) For detailed information see chapter Package Outlines.
2) Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91



Siemens Electronic Components Datasheet

MPSA42 Datasheet

NPN Silicon High-Voltage Transistors

No Preview Available !

MPSA 42
MPSA 43
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
MPSA 42
MPSA 43
Collector-base breakdown voltage
IC = 100 µA, IB = 0
MPSA 42
MPSA 43
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-base cutoff current
VCB = 200 V
VCB = 160 V
VCB = 200 V, TA = 150 °C
VCB = 160 V, TA = 150 °C
MPSA 42
MPSA 43
MPSA 42
MPSA 43
Emitter-base cutoff current
VBE = 3 V, IC = 0
DC current gain 1)
IC =1 mA, VCE = 10 V
IC =10 mA, VCE = 10 V
IC =30 mA, VCE = 10 V
Collector-emitter saturation voltage 1)
IC = 20 mA, IC = 2 mA
MPSA 42
MPSA 43
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
MPSA 42
MPSA 43
Symbol
Limit Values
Unit
min. typ. max.
V(BR)CE0
V(BR)CB0
V(BR)EB0
300
200
300
200
6
ICB0
IEB0
hFE
VCEsat
VBEsat
25
40
40
V
100 nA
100 nA
20 µA
20 µA
100 nA
V
0.5
0.4
0.9
fT
Cobo
70 –
–3
–4
MHz
pF
1) Pulse test conditions: t 300 µs, D 2 %.
Semiconductor Group
2


Part Number MPSA42
Description NPN Silicon High-Voltage Transistors
Maker Siemens
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MPSA42 Datasheet PDF






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