MPSA 42
MPSA 43
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
MPSA 42
MPSA 43
Collector-base breakdown voltage
IC = 100 µA, IB = 0
MPSA 42
MPSA 43
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-base cutoff current
VCB = 200 V
VCB = 160 V
VCB = 200 V, TA = 150 °C
VCB = 160 V, TA = 150 °C
MPSA 42
MPSA 43
MPSA 42
MPSA 43
Emitter-base cutoff current
VBE = 3 V, IC = 0
DC current gain 1)
IC =1 mA, VCE = 10 V
IC =10 mA, VCE = 10 V
IC =30 mA, VCE = 10 V
Collector-emitter saturation voltage 1)
IC = 20 mA, IC = 2 mA
MPSA 42
MPSA 43
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
MPSA 42
MPSA 43
Symbol
Limit Values
Unit
min. typ. max.
V(BR)CE0
V(BR)CB0
V(BR)EB0
300
200
300
200
6
ICB0
–
–
–
–
IEB0 –
hFE
VCEsat
VBEsat
25
40
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
–
–
–
–
–
100 nA
100 nA
20 µA
20 µA
100 nA
–
–
–
–
V
0.5
0.4
0.9
fT
Cobo
–
–
–
70 –
–3
–4
MHz
pF
1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
