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Fairchild Semiconductor Electronic Components Datasheet

MPSA42 Datasheet

NPN High Voltage Amplifier

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October 2014
MPSA42 / MMBTA42 / PZTA42
NPN High-Voltage Amplifier
Features
• This device is designed for application as a video output
and other high-voltage applications.
• Sourced from process 48.
MPSA42
MMBTA42
C
PZTA42
C
EBC
TO-92
E
B SOT-23
Mark: 1D
E
C
B
SOT-223
Ordering Information
Part Number
MPSA42
MMBTA42
PZTA42
Top Mark
MPSA42
1D
A42
Package
TO-92 3L
SOT-23 3L
SOT-223 4L
Packing Method
Bulk
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
300
300
6
500
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

MPSA42 Datasheet

NPN High Voltage Amplifier

No Preview Available !

Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
MPSA42 MMBTA42(3) PZTA42(4)
Unit
Total Device Dissipation
PD Derate Above 25°C
625
5.00
240
1.92
1000
8.00
mW
mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
83.3
°C/W
200 515 125 °C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
ICBO Collector Cut-Off Current
VCB = 200 V, IE = 0
IEBO Emitter Cut-Off Current
On Characteristics(5)
VEB = 6 V, IC = 0
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
IC = 20 mA, IB = 2.0 mA
IC = 20 mA, IB = 2.0 mA
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
Ccb Collector-Base Capacitance
VCB = 20 V, IE = 0,
f = 1.0 MHz
Notes:
5. Pulse test: pulse width 300 μs, duty cycle 2%.
Min. Max. Unit
300 V
300 V
6V
0.1 μA
0.1 μA
25
40
40
0.5 V
0.9 V
50 MHz
3.0 pF
© 1997 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0
2
www.fairchildsemi.com


Part Number MPSA42
Description NPN High Voltage Amplifier
Maker Fairchild
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MPSA42 Datasheet PDF






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