Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
MPSA42 MMBTA42(3) PZTA42(4)
Unit
Total Device Dissipation
PD Derate Above 25°C
625
5.00
240
1.92
1000
8.00
mW
mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
83.3
°C/W
200 515 125 °C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
ICBO Collector Cut-Off Current
VCB = 200 V, IE = 0
IEBO Emitter Cut-Off Current
On Characteristics(5)
VEB = 6 V, IC = 0
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
IC = 20 mA, IB = 2.0 mA
IC = 20 mA, IB = 2.0 mA
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
Ccb Collector-Base Capacitance
VCB = 20 V, IE = 0,
f = 1.0 MHz
Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Min. Max. Unit
300 V
300 V
6V
0.1 μA
0.1 μA
25
40
40
0.5 V
0.9 V
50 MHz
3.0 pF
© 1997 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0
2
www.fairchildsemi.com
