900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

MPSA42 Datasheet

High Voltage Transistors

No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA42/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
MPSA42 *
MPSA43
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPSA42 MPSA43 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
300 200
300 200
6.0 6.0
500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/mW
°C/mW
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
MPSA42
MPSA43
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSA42
MPSA43
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSA42
MPSA43
MPSA42
MPSA43
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
Vdc
300 —
200 —
Vdc
300 —
200 —
6.0 — Vdc
µAdc
— 0.1
— 0.1
µAdc
— 0.1
— 0.1
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


Motorola Electronic Components Datasheet

MPSA42 Datasheet

High Voltage Transistors

No Preview Available !

MPSA42 MPSA43
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MPSA42
MPSA43
hFE
VCE(sat)
25
40
40
Vdc
0.5
0.4
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
0.9 Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT 50 — MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Ccb pF
MPSA42
— 3.0
MPSA43
— 4.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSA42
Description High Voltage Transistors
Maker Motorola
PDF Download

MPSA42 Datasheet PDF






Similar Datasheet

1 MPSA42 NPN EPITAXIAL PLANAR SILICON TRANSISTORS
CDIL
2 MPSA42 NPN Silicon Epitaxial Planar Transistor
SEMTECH
3 MPSA42 SILICON HIGH VOLTAGE NPN TRANSISTORS
Central Semiconductor
4 MPSA42 EPITAXIAL PLANAR NPN TRANSISTOR
KEC
5 MPSA42 NPN High Voltage Amplifier
Fairchild
6 MPSA42 NPN Silicon High-Voltage Transistors
Siemens
7 MPSA42 NPN high-voltage transistors
Philips
8 MPSA42 High Voltage Transistors
Motorola
9 MPSA42 NPN TRANSISTOR
UTC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy