STP2301 mosfet equivalent, p-channel enhancement mode mosfet.
* -20V/-3.0A, RDS(ON) =80mΩ(typ.)@VGS =-4.5V
* -20V/-2.0A, RDS(ON) =105mΩ(typ.)@VGS =-2.5V
* Super high de.
*FEATURE
The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is.
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