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STP2301
P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3
D
G
S
1
2
FEATURE
-20V/-2.8A, RDS(ON) = 90m-ohm (Typ.) @VGS = -4.5V
-20V/-2.0A, RDS(ON) = 110m-ohm @VGS = -2.
STP2301 Datasheet
