STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

STP2301

STP2305

STP23N80K5

STP23NM50N

STP23NM60N

STP23NM60ND

STP200N3LL

STP200N4F3

STP200N6F3

STP200NF03

STP200NF04

STP200NF04L

STP2021

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